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HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet
IXFN 72N55Q2
VDSS = 550 V ID25 = 72 A RDS(on)= 72 m 250 ns trr
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings
G S
550 550 30 40 72 288 72 60 5.0 20 890 -55 ... +150 150 -55 ... +150 2500
V V V V A A A mJ J V/ns Features W C C C V G = Gate S = Source
S D
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
*Double metal process for low
gate resistance with Aluminium nitride isolation *Unclamped Inductive Switching (UIS) rated *Low package inductance
*miniBLOC,
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
*Fast intrinsic Rectifier
Applications * DC-DC converters
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 550 2.5 5.0 V V
* Switched-mode
power supplies * DC choppers
and resonant-mode
VDSS V GS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 TJ = 25C TJ = 125C
* Pulse
generators
200 nA 100 A 5 mA 72 m
Advantages * Easy to mount
* Space savings * High power density
(c) 2003 IXYS All rights reserved
DS99030B(10/03)
IXFN 72N55Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 40 57 10500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 230 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 30 23 58 10 258 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 65 123 0.14 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM IF = 25A -di/dt = 100 A/s VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 72 288 1.5 250 1.2 8 A A V ns C A
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN 72N55Q2
Fig. 1. Output Characteristics @ 25 Deg. C
72 63 54 VGS = 10V 8V 7V 180 160 140
Fig. 2. Extended Output Characteristics @ 25 deg. C
VGS = 10V 8V
I D - Amperes
45 36 27 18 9 0 0 1 2 3 4 5 6 5V 6V
I D - Amperes
120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 5V 16 18 20 6V 7V
V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C
72 63 54 VGS = 10V 8V 7V 6V 2.8 2.6 2.4 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature
R D S (on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 72A I D = 36A
I D - Amperes
45 36 27 18 5V 9 0 0 2 4 6 8 10 12
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID
2.8 2.6 2.4 VGS = 10V TJ = 125C 80 70 60
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S (on) - Normalized
2.2
I D - Amperes
TJ = 25C
2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 60 80 100 120 140 160 180
50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
(c) 2003 IXYS All rights reserved
TC - Degrees Centigrade
IXFN 72N55Q2
Fig. 7. Input Adm ittance
100 90 80 110 100 90 80 TJ = -40C 25C 125C
Fig. 8. Transconductance
I D - Amperes
g f s - Siemens
TJ = 125C 25C -40C 3.5 4 4.5 5 5.5 6 6.5 7
70 60 50 40 30 20 10 0
70 60 50 40 30 20 10 0 0
20
40
60
80
100
120
140
160
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
200 180 160 10 9 8 7 VDS = 275V I D = 36A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
140 120 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 TJ = 125C TJ = 25C
VG S - Volts
6 5 4 3 2 1 0 0 40 80 120 160 200 240 280
V S D - Volts Fig. 11. Capacitance
100000 f = 1MHz C iss 10000 0.16 0.14 0.12
Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Re sistance
Capacitance - pF
R (th) J C - (C/W)
0.1 0.08 0.06 0.04
C oss 1000 C rss
0.02 100 0 5 10 15 0
V D S - Volts
20
25
30
35
40
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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